CESL-Stressor-Induced Morphological Instability of...

IEEE Electron Device Letters 2011 / 12 Vol. 32; Iss. 12

CESL-Stressor-Induced Morphological Instability of Pt-Dissolved Ni Germanosilicide Formed on Silicon Germanium Epilayer

Li, Ming-yen, Chen, Jei-Ming, Liu, Chih-Chien, Lin, Jin-Fu
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Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2011.2166991
Date:
December, 2011
File:
PDF, 289 KB
english, 2011
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