[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Investigation of the physical mechanisms governing data-retention in down to 10nm nano-trench Al2O3/CuTeGe conductive bridge RAM (CBRAM)
Guy, J., Molas, G., Vianello, E., Longnos, F., Blanc, S., Carabasse, C., Bernard, M., Nodin, J. F., Toffoli, A., Cluzel, J., Blaise, P., Dorion, P., Cueto, O., Grampeix, H., Souchier, E., Cabout, T.,Year:
2013
Language:
english
DOI:
10.1109/iedm.2013.6724722
File:
PDF, 2.39 MB
english, 2013
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