[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Activation characteristics of Si-implanted GaN by rapid thermal annealing
Du, Jiangfeng, Zhao, Jinxia, Yu, Qi, Yang, MohuaYear:
2010
Language:
english
DOI:
10.1109/icsict.2010.5667477
File:
PDF, 342 KB
english, 2010