[IEEE 2007 IEEE Symposium on VLSI Technology - Kyoto, Japan (2007.06.12-2007.06.14)] 2007 IEEE Symposium on VLSI Technology - A Novel Gate-Injection Program/Erase P-Channel NAND-Type Flash Memory with High (10M Cycle) Endurance
Lue, Hang-Ting, Lai, Erh-Kun, Wang, Szu-Yu, Yang, Ling-Wu, Yang, Tahone, Chen, Kuang-Chao, Hsieh, Kuang-Yeu, Liu, Rich, Lu, Chih-YuanYear:
2007
Language:
english
DOI:
10.1109/vlsit.2007.4339759
File:
PDF, 1.16 MB
english, 2007