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[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - Experimental investigation of dependence of electrical characteristics on device parameters in trench MOS barrier Schottky diodes
Sakai, T., Matsumoto, S., Yachi, T.Year:
1998
Language:
english
DOI:
10.1109/ispsd.1998.702691
File:
PDF, 338 KB
english, 1998