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[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - Robust porous MSQ (k=2.3, e=12 GPa) for low-temperature (>350°C) Cu/low-k integration using ArF resist mask process
Ohashi, N., Misawa, K., Sone, S., Shin, H.J., Inukai, K., Soda, E., Kondo, S., Furuya, A., Okamura, H., Ogawa, S., Kobayashi, N.Year:
2003
Language:
english
DOI:
10.1109/iedm.2003.1269414
File:
PDF, 410 KB
english, 2003