[IEEE IEEE InternationalElectron Devices Meeting, 2005....

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[IEEE IEEE InternationalElectron...

[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - An easily integrable NiSi TOSI-gate/SiON-module for LP SRAM applications based on a single step silicidation of gate and junction

Muller, M., Mondot, A., Gierczynski, N., Aime, D., Froment, B., Leverd, F., Gouraud, P., Talbot, A., Descombes, S., Morand, Y., Le Tiec, Y., Besson, P., Toffoli, A., Ribes, G., Roux, J.-M., Pokrant, S

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Year:

2005

Language:

english

DOI:

10.1109/iedm.2005.1609428

File:

PDF, 1.56 MB

english, 2005

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