[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Doubling or quadrupling MuGFET fin integration scheme with higher pattern fidelity, lower CD variation and higher layout efficiency
Rooyackers, R., Augendre, E., Degroote, B., Collaert, N., Nackaerts, A., Dixit, A., Vandeweyer, T., Pawlak, B., Ercken, M., Kunnen, E., Dilliway, G., Leys, F., Loo, R., Jurczak, M., Biesemans, S.Year:
2006
Language:
english
DOI:
10.1109/iedm.2006.346954
File:
PDF, 1.48 MB
english, 2006