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[IEEE Proceedings of IEEE International Electron Devices Meeting - San Francisco, CA, USA (1989.12.3-1989.12.6)] International Technical Digest on Electron Devices Meeting - Sub-20 ps silicon bipolar technology using selective epitaxial growth
Meister,, Stengl,, Meul,, Weyl,, Packan,, Felder,, Klose,, Schreiter,, Popp,, Rein,, Treitinger,Year:
1992
Language:
english
DOI:
10.1109/iedm.1992.307387
File:
PDF, 309 KB
english, 1992