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[IRE 1987 International Electron Devices Meeting - ()] 1987 International Electron Devices Meeting - Steep subthreshold characteristic and enhanced transconductance of fully-recessed oxide (trench) isolated 1/4 µm width MOSFETs
Shigyo, N., Wada, T., Fukuda, S., Hieda, K., Hamamoto, T., Watanabe, H., Sunouchi, K., Tango, H.Year:
1987
Language:
english
DOI:
10.1109/iedm.1987.191508
File:
PDF, 280 KB
english, 1987