Effect of Drift-Region Concentration on Hot-Carrier-Induced...

IEEE Electron Device Letters 2008 / 07 Vol. 29; Iss. 7

Effect of Drift-Region Concentration on Hot-Carrier-Induced $R_{\rm on}$ Degradation in nLDMOS Transistors

Chen, Jone F., Lee, J. R., Wu, Kuo-Ming, Huang, Tsung-Yi, Liu, C. M.
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Volume:
29
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2008.2000610
Date:
July, 2008
File:
PDF, 593 KB
english, 2008
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