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[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC Source/Drain
Amat, E., Rodriguez, R., Gonzalez, M.B., Martin-Martinez, J., Nafria, M., Aymerich, X., Machkaoutsan, V., Bauer, M., Verheyen, P., Simoen, E.Year:
2010
Language:
english
DOI:
10.1109/icsict.2010.5667396
File:
PDF, 338 KB
english, 2010