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[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - High-gain GaInP/GaAs HBT monolithic transimpedance amplifier for high-speed optoelectronic receivers
Mohammadi, S., Park, J.W., Pavlidis, D., Dua, C., Guyaux, J.L., Garcia, J.C.Year:
1998
Language:
english
DOI:
10.1109/iedm.1998.746443
File:
PDF, 624 KB
english, 1998