[IEEE IC's (ISPSD) - Orlando, FL, USA (2008.05.18-2008.05.22)] 2008 20th International Symposium on Power Semiconductor Devices and IC's - A High Current 3300V Module Employing Reverse Conducting IGBTs Setting a New Benchmark in Output Power Capability
Rahimo, M., Schlapbach, U., Kopta, A., Vobecky, J., Schneider, D., Baschnagel, A.Year:
2008
Language:
english
DOI:
10.1109/ispsd.2008.4538899
File:
PDF, 538 KB
english, 2008