Design and performance of 0.1- mu m CMOS devices using low-impurity-channel transistors (LICT's)
Aoki, M., Ishii, T., Yoshimura, T., Kiyota, Y., Iijima, S., Yamanaka, T., Kure, T., Ohyu, K., Nishida, T., Okazaki, S., Seki, K., Shimohigashi, K.Volume:
13
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.144948
Date:
January, 1992
File:
PDF, 278 KB
english, 1992