[IEEE International Electron Devices Meeting. IEDM Technical Digest - Washington, DC, USA (7-10 Dec. 1997)] International Electron Devices Meeting. IEDM Technical Digest - Dual-damascene interconnects with 0.28 μm vias using in situ copper doped aluminum chemical vapor deposition
Sugai, K., Chikaki, S., Nakajima, T., Kikkawa, T.Year:
1997
Language:
english
DOI:
10.1109/iedm.1997.650498
File:
PDF, 716 KB
english, 1997