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Excess drain current in heterojunction FETs due to substrate space-charge-limited current
Tehrani, S., Goronkin, H., Hoogstra, M.M., Maracas, G.N., Curless, J.A., Kramer, G.D., Peffley, M.S., Tsui, R.K.Volume:
36
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/16.34217
Date:
January, 1989
File:
PDF, 618 KB
english, 1989