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[IEEE 2011 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2011.04.10-2011.04.14)] 2011 International Reliability Physics Symposium - Soft Oxide Breakdown impact on the functionality of a 40 nm SRAM memory
Cheffah, Saad, Huard, Vincent, Chevallier, Remy, Bravaix, AlainYear:
2011
Language:
english
DOI:
10.1109/irps.2011.5784561
File:
PDF, 366 KB
english, 2011