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[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - High performance metal gate MOSFETs fabricated by CMP for 0.1 μm regime
Yagishita, A., Saito, T., Nakajima, K., Inumiya, S., Akasaka, Y., Ozawa, Y., Minamihaba, G., Yano, H., Hieda, K., Suguro, K., Arikado, T., Okumura, K.Year:
1998
Language:
english
DOI:
10.1109/iedm.1998.746473
File:
PDF, 425 KB
english, 1998