Mechanism of Hydrogen Sensing by AlGaN/GaN Pt-Gate Field...

IEEE Sensors Journal 2015 / 1 Vol. 15; Iss. 1

Mechanism of Hydrogen Sensing by AlGaN/GaN Pt-Gate Field Effect Transistors: Magnetoresistance Studies

Consejo, Christophe, Prystawko, Pawel, Knap, Wojciech, Nowakowska-Siwinska, Anna, Perlin, Piotr, Leszczynski, Michal
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Volume:
15
Language:
english
Journal:
IEEE Sensors Journal
DOI:
10.1109/jsen.2014.2340436
Date:
January, 2015
File:
PDF, 903 KB
english, 2015
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