Identification of defect types in moderately Si-doped GaInNAsSb layer in p-GaAs/n- GaInNAsSb/n-GaAs solar cell structure using admittance spectroscopy
Monirul Islam, Muhammad, Miyashita, Naoya, Ahsan, Nazmul, Sakurai, Takeaki, Akimoto, Katsuhiro, Okada, YoshitakaVolume:
112
Year:
2012
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4768716
File:
PDF, 1.60 MB
english, 2012