International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
2014 / 07 Vol. 27; Iss. 4
A 2-D surface-potential-based threshold voltage model for short channel asymmetric heavily doped DG MOSFETs
Dutta, Pradipta, Syamal, Binit, Mohankumar, Nagarajan, Sarkar, Chandan KumarVolume:
27
Language:
english
Journal:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
DOI:
10.1002/jnm.1971
Date:
July, 2014
File:
PDF, 1.18 MB
english, 2014