Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates
Cariou, R., Ruggeri, R., Tan, X., Mannino, Giovanni, Nassar, J., Roca i Cabarrocas, P.Volume:
4
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.4886774
Date:
July, 2014
File:
PDF, 1.33 MB
english, 2014