Separation of hot-carrier-induced interface trap creation...

IEEE Electron Device Letters 2001 / 04 Vol. 22; Iss. 4

Separation of hot-carrier-induced interface trap creation and oxide charge trapping in PMOSFETs studied by hydrogen/deuterium isotope effect

Cheng, K., Lee, J., Lyding, J.W., Young-Kwang Kim,, Young-Wug Kim,, Kuang Pyuk Suh,
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Volume:
22
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.915609
Date:
April, 2001
File:
PDF, 58 KB
english, 2001
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