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Effects of high field electron injection into the gate oxide of P-channel metal–oxide–semiconductor transistors
Moragues, J. M., Oualid, J., Jerisian, R., Ciantar, E.Volume:
74
Year:
1993
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.354292
File:
PDF, 1.36 MB
english, 1993