Dopant profiling in silicon nanowires measured by scanning...

physica status solidi (RRL) - Rapid Research Letters 2014 / 04 Vol. 8; Iss. 4

Dopant profiling in silicon nanowires measured by scanning capacitance microscopy

Bassani, Franck, Periwal, Priyanka, Salem, Bassem, Chevalier, Nicolas, Mariolle, Denis, Audoit, Guillaume, Gentile, Pascal, Baron, Thierry
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Volume:
8
Language:
english
Journal:
physica status solidi (RRL) - Rapid Research Letters
DOI:
10.1002/pssr.201409041
Date:
April, 2014
File:
PDF, 397 KB
english, 2014
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