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Formation of device-grade epitaxial silicon films at extremely low temperatures by low-energy bias sputtering
Ohmi, T., Ichikawa, T., Iwabuchi, H., Shibata, T.Volume:
66
Year:
1989
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.343786
File:
PDF, 1.57 MB
english, 1989