Novel epitaxial silicon interlayer for junction engineering...

Novel epitaxial silicon interlayer for junction engineering in aggressively-scaled germanium photodetectors

Lim, Andy Eu-Jin, Liow, Tsung-Yang, Chen, Kok Kiong, Tern, Roger Poh Cher, Lo, Guo-Qiang
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Volume:
3
Year:
2013
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.4821118
File:
PDF, 1.12 MB
english, 2013
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