Effects of Channel Width on Stress Enhancement for...

IEEE Electron Device Letters 2010 / 01 Vol. 31; Iss. 1

Effects of Channel Width on Stress Enhancement for Damascene-Gate nFETs With Top-Cut Tensile-Stress Liner

Mayuzumi, S., Yamakawa, S., Wakabayashi, H., Tateshita, Y., Tsukamoto, M., Ohno, T., Nagashima, N.
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Volume:
31
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2009.2035146
Date:
January, 2010
File:
PDF, 470 KB
english, 2010
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