[IEEE 9th International Symposium on the Physical and...

  • Main
  • [IEEE 9th International Symposium on...

[IEEE 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Singapore (8-12 July 2002)] Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) - Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

Zhichun Wang,, Ackaert, J., Salm, C., De Backer, E., van den Bosch, G., Zawalski, W.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2002
Language:
english
DOI:
10.1109/ipfa.2002.1025671
File:
PDF, 381 KB
english, 2002
Conversion to is in progress
Conversion to is failed