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Elastic strain relaxation in GaN–AlN–GaN semiconductor–insulator–semiconductor structures
Bykhovski, A. D., Gelmont, B. L., Shur, M. S.Volume:
78
Year:
1995
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.359947
File:
PDF, 878 KB
english, 1995