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Erratum: “Lattice vacancies in silicon film exposed to external electric field” [J. Appl. Phys. 114, 043713 (2013)]
Mao, Yuliang, Caliste, Damien, Pochet, PascalVolume:
115
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4884315
Date:
June, 2014
File:
PDF, 262 KB
english, 2014