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[IEEE 2011 12th International Conference on Ultimate Integration on Silicon (ULIS) - Cork, Ireland (2011.03.14-2011.03.16)] Ulis 2011 Ultimate Integration on Silicon - 20nm Gate length Schottky MOSFETs with ultra thin NiSi/epitaxial NiSi2 source/drain
Knoll, L., Zhao, Q. T., Luptak, R., Trellenkamp, S., Bourdelle, K. K., Mantl, S.Year:
2011
Language:
english
DOI:
10.1109/ulis.2011.5757986
File:
PDF, 605 KB
english, 2011