Gate-Geometric Recessed Nanoscale $\hbox{In}_{0.52}...

Gate-Geometric Recessed Nanoscale $\hbox{In}_{0.52} \hbox{Al}_{0.48}\hbox{As}$–$\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ Double-Gate HEMT for High Breakdown

Rathi, Servin, Gupta, R. S., Gupta, Mridula
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
12
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/tdmr.2011.2178026
Date:
March, 2012
File:
PDF, 1002 KB
english, 2012
Conversion to is in progress
Conversion to is failed