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Gate-Geometric Recessed Nanoscale $\hbox{In}_{0.52} \hbox{Al}_{0.48}\hbox{As}$–$\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ Double-Gate HEMT for High Breakdown
Rathi, Servin, Gupta, R. S., Gupta, MridulaVolume:
12
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/tdmr.2011.2178026
Date:
March, 2012
File:
PDF, 1002 KB
english, 2012