A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash...

IEEE Electron Device Letters 2010 / 03 Vol. 31; Iss. 3

A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics

Nai-Chao Su,, Shui Jinn Wang,, Chin, A.
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Volume:
31
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2009.2037986
Date:
March, 2010
File:
PDF, 157 KB
english, 2010
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