Effects of interface reaction on the performance of AlO...

Japanese Journal of Applied Physics 2014 / 05 Vol. 53; Iss. 5

Effects of interface reaction on the performance of AlO x /WO x bilayer resistive switching memory

Song, Ya-Li, Yang, Ling-Ming, Wang, Yan-Liang, Liu, Yi, Lin, Yin-Yin
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Volume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjap.53.051101
Date:
May, 2014
File:
PDF, 927 KB
english, 2014
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