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Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory
Chang, Yao-Feng, Chen, Pai-Yu, Fowler, Burt, Chen, Yen-Ting, Xue, Fei, Wang, Yanzhen, Zhou, Fei, Lee, Jack C.Volume:
112
Year:
2012
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4769218
File:
PDF, 3.24 MB
english, 2012