[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Scaling deep trench based eDRAM on SOI to 32nm and Beyond
Wang, G., Anand, D., Butt, N., Cestero, A., Chudzik, M., Ervin, J., Fang, S., Freeman, G., Ho, H., Khan, B., Kim, B., Kong, W., Krishnan, R., Krishnan, S., Kwon, O., Liu, J., McStay, K., Nelson, E., NYear:
2009
Language:
english
DOI:
10.1109/iedm.2009.5424375
File:
PDF, 1.01 MB
english, 2009