Measurement of the occupation lengths of channeled 17-MeV...

Physical Review B 1989 / 9 Vol. 40; Iss. 7

Measurement of the occupation lengths of channeled 17-MeV electrons and 54-MeV electrons and positrons in silicon by means of channeling radiation

Kephart, J. O., Pantell, R. H., Berman, B. L., Datz, S., Park, H., Klein, R. K.
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Volume:
40
Language:
english
Journal:
Physical Review B
DOI:
10.1103/physrevb.40.4249
Date:
September, 1989
File:
PDF, 812 KB
english, 1989
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