MOCVD Growth of GaN on Sapphire Using a Ga2O3 Interlayer

MOCVD Growth of GaN on Sapphire Using a Ga2O3 Interlayer

Tsai, Tsung-Yen, Ou, Sin-Liang, Hung, Ming-Tsung, Wuu, Dong-Sing, Horng, Ray-Hua
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Volume:
158
Year:
2011
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/2.073111jes
File:
PDF, 695 KB
english, 2011
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