[Hartung-Gorre Verlag ISPSD'94 International Symposium on Power Semiconductor Devices and IC's - Davos, Switzerland (31 May-2 June 1994)] Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics - Improvement of the breakdown voltage of GaAs-FETs using low-temperature-grown GaAs insulator
Thomas, H., Luo, J.K., Morgan, D.V., Westwood, D., Lipka, K., Splingart, E., Kohn, E.Year:
1994
Language:
english
DOI:
10.1109/ispsd.1994.583686
File:
PDF, 555 KB
english, 1994