Characteristics of ZrO[sub 2] gate dielectric deposited using Zr t–butoxide and Zr(NEt[sub 2])[sub 4] precursors by plasma enhanced atomic layer deposition method
Kim, Yangdo, Koo, Jaehyoung, Han, Jiwoong, Choi, Sungwoo, Jeon, Hyeongtag, Park, Chan-GyungVolume:
92
Year:
2002
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1513196
File:
PDF, 488 KB
english, 2002