The transition mechanisms of a ten-period InAs∕GaAs...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2008 / 11 Vol. 26; Iss. 6

The transition mechanisms of a ten-period InAs∕GaAs quantum-dot infrared photodetector

Tseng, Chi-Che, Chou, Shu-Ting, Lin, Shin-Yen, Chen, Cheng-Nan, Lin, Wei-Hsun, Chen, Yi-Hao, Chung, Tung-Hsun, Wu, Meng-Chyi
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Volume:
26
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.2990784
Date:
November, 2008
File:
PDF, 418 KB
english, 2008
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