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High-quality Si-implanted In[sub 0.53]Ga[sub 0.47]As epitaxial layers and their application to n[sup +]p junction devices
Blanco, M. N., Redondo, E., Calle, F., Mártil, I., González-Díaz, G.Volume:
87
Year:
2000
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.372369
File:
PDF, 317 KB
english, 2000