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[IEEE 2006 International Symposium on Semiconductor Manufacturing (ISSM) - Tokyo, Japan (2006.09.25-2006.09.27)] 2006 IEEE International Symposium on Semiconductor Manufacturing - Voltage Contrast Enhancement for Gate Leak Failure Detected by Electron Beam Inspection
Fujiyoshi, Katsuhiro, Sawai, Koetsu, Inoue, Kazutaka, Saiki, Keiichi, Sakurai, KoichiYear:
2006
Language:
english
DOI:
10.1109/issm.2006.4493009
File:
PDF, 2.49 MB
english, 2006