Hot hole redistribution in impurity states of boron-doped...

Journal of Applied Physics 2005 Vol. 98; Iss. 9

Hot hole redistribution in impurity states of boron-doped silicon terahertz emitters

Lv, P.-C., Troeger, R. T., Zhang, X., Adam, T. N., Kolodzey, J., Odnoblyudov, M. A., Yassievich, I. N.
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Volume:
98
Year:
2005
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2128045
File:
PDF, 435 KB
english, 2005
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