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[IEEE 2006 European Solid-State Device Research Conference - Montreux, Switzerland (2006.09.19-2006.09.21)] 2006 European Solid-State Device Research Conference - Carrier Backscattering Characteristics of Strained N-MOSFET Featuring Silicon-Carbon Source/Drain Regions
Ang, Kah-wee, Chin, Hock-chun, Chui, King-jien, Li, Ming-fu, Samudra, Ganesh, Yeo, Yee-chiaYear:
2006
Language:
english
DOI:
10.1109/essder.2006.307645
File:
PDF, 685 KB
english, 2006