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[IEEE 2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers - Hsinchu, Taiwan (18-20 April 2001)] 2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517) - New stack gate insulator structure strongly reduces FIBL effect
Chen-Hsiao Lai,, Ling-Chang Hu,, Hai-Ming Lee,, Long-Je Do,, Ya-Chin King,Year:
2001
Language:
english
DOI:
10.1109/vtsa.2001.934523
File:
PDF, 320 KB
english, 2001