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[IEEE IEEE Gallium Arsenide Integrated Circuits Symposium - Monterey, CA, USA (20-23 Oct. 2002)] 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu - A high gain-bandwidth product InP HEMT distributed amplifier with 92 GHz cut-off frequency for 40 Gbit/s applications and beyond
Meliani, C., Rondeau, G., Post, G., Decobert, J., Mouzannar, W., Dutisseuil, E., Lefevre, R.Year:
2002
Language:
english
DOI:
10.1109/gaas.2002.1049039
File:
PDF, 425 KB
english, 2002