Effects of MoS2 thickness and air humidity on transport...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2014 / 11 Vol. 32; Iss. 6

Effects of MoS2 thickness and air humidity on transport characteristics of plasma-doped MoS2 field-effect transistors

Chen, Mikai, Wi, Sungjin, Nam, Hongsuk, Priessnitz, Greg, Liang, Xiaogan
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Volume:
32
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4897133
Date:
November, 2014
File:
PDF, 2.17 MB
english, 2014
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